Invention Grant
- Patent Title: Photosensitive material and method of lithography
-
Application No.: US14968708Application Date: 2015-12-14
-
Publication No.: US09665004B2Publication Date: 2017-05-30
- Inventor: Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/16 ; G03F7/11

Abstract:
Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.
Public/Granted literature
- US20160097976A1 PHOTOSENSITIVE MATERIAL AND METHOD OF LITHOGRAPHY Public/Granted day:2016-04-07
Information query
IPC分类: