Invention Grant
- Patent Title: Semiconductor device including cell region stacked on peripheral region and method of fabricating the same
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Application No.: US15049526Application Date: 2016-02-22
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Publication No.: US09666289B2Publication Date: 2017-05-30
- Inventor: Jae-Eun Lee , Sunghoon Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyonggi-Do
- Agency: F. Chau & Assocates, LLC
- Priority: KR10-2015-0053885 20150416
- Main IPC: G11C16/06
- IPC: G11C16/06 ; H01L27/115 ; G11C16/14 ; H01L27/11526 ; H01L27/11556 ; H01L27/11573 ; H01L27/11582 ; H01L23/528 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; G11C5/02 ; G11C16/04

Abstract:
Provided are semiconductor devices including a peripheral region and a cell region stacked thereon and a method of fabricating the same. The semiconductor device may include a peripheral region including a lower substrate and a peripheral circuit provided thereon and a cell region including an upper substrate and a cell array provided thereon. The cell region may be stacked on the peripheral region. When an operation signal is applied to the cell region from the peripheral region, at least a portion of the peripheral and cell regions may be used as a ground pattern applied with a ground signal, thereby being in an electrical ground state.
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