Invention Grant
- Patent Title: Titanium target for sputtering
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Application No.: US14353507Application Date: 2012-04-27
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Publication No.: US09666418B2Publication Date: 2017-05-30
- Inventor: Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
- Applicant: Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson, LLP
- Priority: JP2012-003732 20120112
- International Application: PCT/JP2012/061412 WO 20120427
- International Announcement: WO2013/105283 WO 20130718
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34 ; C22C14/00 ; C22C1/10
Abstract:
A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.
Public/Granted literature
- US20140251802A1 TITANIUM TARGET FOR SPUTTERING Public/Granted day:2014-09-11
Information query
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