Invention Grant
- Patent Title: Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate
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Application No.: US13828990Application Date: 2013-03-14
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Publication No.: US09666602B2Publication Date: 2017-05-30
- Inventor: Ji-Seon Lee , Dong-Jo Kim , Yoon-Ho Khang , Yong-Su Lee , Jong-Chan Lee
- Applicant: Samsung Display Co., LTD.
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2012-0133875 20121123
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L27/12 ; H01L29/786

Abstract:
A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.
Public/Granted literature
- US20140145177A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR SUBSTRATE Public/Granted day:2014-05-29
Information query
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