Invention Grant
- Patent Title: Growth substrate, nitride semiconductor device and method of manufacturing the same
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Application No.: US14184146Application Date: 2014-02-19
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Publication No.: US09666759B2Publication Date: 2017-05-30
- Inventor: Jonghyun Rho , Minseok Choi , Taehyeong Kim
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2013-0019212 20130222
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L21/02 ; H01L33/00 ; H01L33/12 ; H01L33/16
Abstract:
Disclosed is a method of manufacturing a light emitting device. More particularly, disclosed are a growth substrate, a nitride semiconductor device and a method of manufacturing a light emitting device. The method includes preparing a growth substrate including a metal substrate, forming a semiconductor structure including a nitride-based semiconductor on the growth substrate, providing a support structure on the semiconductor structure, and separating the growth substrate from the semiconductor structure.
Public/Granted literature
- US20140239310A1 GROWTH SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-08-28
Information query
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