Invention Grant
- Patent Title: High-current sensing scheme using drain-source voltage
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Application No.: US14533950Application Date: 2014-11-05
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Publication No.: US09671438B2Publication Date: 2017-06-06
- Inventor: Chuang Zhang , Zhengming Fu , Nan Chen
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: G01R19/25
- IPC: G01R19/25 ; G01R19/32 ; G01R19/00

Abstract:
In one embodiment, a method for measuring current is described herein. The method comprises shorting first and second inputs of an amplifying circuit to generate a first output signal, and converting the first output signal into an offset cancelation value. The method also comprises passing a current through a power switch, wherein the current generates a voltage drop across the power switch, applying the voltage drop across the first and second inputs of the amplifying circuit to generate a second output signal, and converting the second output signal into a current value. The method further comprises subtracting the offset cancelation value from the current value to generate an offset-compensated current value.
Public/Granted literature
- US20160124030A1 HIGH-CURRENT SENSING SCHEME USING DRAIN-SOURCE VOLTAGE Public/Granted day:2016-05-05
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