Invention Grant
- Patent Title: Integrated circuit manufacture using direct write lithography
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Application No.: US13944129Application Date: 2013-07-17
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Publication No.: US09672316B2Publication Date: 2017-06-06
- Inventor: Gregory Munson Yeric
- Applicant: ARM LIMITED
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Nixon & Vanderhye P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/027 ; G03F7/20 ; H01L21/66

Abstract:
Integrated circuits are manufactured using a direct write lithography step to at least partially form at least one layer within the integrated circuit. The performance characteristics of an at least partially formed integrated circuit are measured and then the layout design to be applied with a direct write lithography step is varied in dependence upon those performance characteristics. Accordingly, the performance of an individual integrated circuit, wafer of integrated circuits or batch of wafers may be altered.
Public/Granted literature
- US20150026650A1 INTEGRATED CIRCUIT MANUFACTURE USING DIRECT WRITE LITHOGRAPHY Public/Granted day:2015-01-22
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