A method of controlling a refresh operation for a memory device is disclosed. The method includes storing a first row address corresponding to a first row of a memory cell array, storing one or more second row addresses corresponding to one or more second rows of the memory cell array, the one or more second row addresses corresponding to the first row address, sequentially generating row addresses as a refresh row address during a first refresh interval, for each generated row address, when a generated row address identical to one of the one or more second row addresses is detected, stopping the generation of row addresses and sequentially outputting the one second row address and the first row address as the refresh row address, restarting the generation of the row addresses as the refresh row address after outputting the one second row address and the first row address.