Invention Grant
- Patent Title: High power semiconductor package subsystems
-
Application No.: US13613979Application Date: 2012-09-13
-
Publication No.: US09673162B2Publication Date: 2017-06-06
- Inventor: Lakshminarayan Viswanathan , Scott M. Hayes , Scott D. Marshall , Mahesh K. Shah
- Applicant: Lakshminarayan Viswanathan , Scott M. Hayes , Scott D. Marshall , Mahesh K. Shah
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L23/00 ; H01L23/367 ; H01L23/538 ; H01L23/498 ; H01L23/31 ; H01L21/56
Abstract:
A method and apparatus for incorporation of high power device dies into smaller system packages by embedding metal “coins” having high thermal conductivity into package substrates, or printed circuit boards, and coupling the power device dies onto the metal coins is provided. In one embodiment, the power device die can be attached to an already embedded metal coin in the package substrate or PCB. The power device die can be directly coupled to the embedded metal coin or the power device die can be attached to a metallic interposer which is then bonded to the embedded metal coin. In another embodiment, the die can be attached to the metal coin and then the PCB or package substrate can be assembled to incorporate the copper coin. Active dies are coupled to each other either through wire bonds or other passive components, or using a built-up interconnect.
Public/Granted literature
- US20140070397A1 HIGH POWER SEMICONDUCTOR PACKAGE SUBSYSTEMS Public/Granted day:2014-03-13
Information query
IPC分类:
