Invention Grant
- Patent Title: Substrate and method of forming the same
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Application No.: US14276763Application Date: 2014-05-13
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Publication No.: US09679841B2Publication Date: 2017-06-13
- Inventor: Houssam Wafic Jomaa , Omar James Bchir , Kuiwon Kang , Chin-Kwan Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L23/522 ; H01L21/768 ; H01L21/48 ; H01L23/538 ; H01L21/683

Abstract:
Methods and apparatus for formation of a semiconductor substrate with photoactive dielectric material, embedded traces, a padless skip via extending through two dielectric layers, and a coreless package are provided. In one embodiment, a method for forming a core having a copper layer; laminating the copper layer a photoactive dielectric layer; forming a plurality of trace patterns in the photoactive dielectric layer; plating the plurality of trace patterns to form a plurality of traces; forming an insulating dielectric layer on the photoactive dielectric layer; forming a via through the insulating dielectric layer and the photoactive dielectric layer; forming additional routing patterns on the insulating dielectric layer; removing the core; and applying a solder mask.
Public/Granted literature
- US20150333004A1 SUBSTRATE AND METHOD OF FORMING THE SAME Public/Granted day:2015-11-19
Information query
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