Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15296955Application Date: 2016-10-18
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Publication No.: US09679901B1Publication Date: 2017-06-13
- Inventor: Ying-Chiao Wang , Chien-Ting Ho , Le-Tien Jung , Shih-Fang Tzou , Chin-Lung Lin , Harn-Jiunn Wang
- Applicant: United Microelectronics Corp. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsinchu CN Fujian Province
- Assignee: United Microelectronics Corp.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: United Microelectronics Corp.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsinchu CN Fujian Province
- Agency: J.C. Patents
- Priority: CN201610839780 20160922
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/108 ; H01L29/06 ; H01L21/461
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a plurality of active areas, and an isolation structure. The substrate has a device region and a peripheral region surrounding the device region. The active areas are located in the substrate in the device region. When viewed from above, the edges of the ends of the active areas adjacent to the boundary of the device region are aligned with each other, and the width of the ends of the active areas adjacent to the boundary of the device region is greater than the width of the other portions of the active areas. The isolation structure is disposed in the substrate and surrounds the active areas and is located in the peripheral region.
Information query
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