Invention Grant
- Patent Title: Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
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Application No.: US14578161Application Date: 2014-12-19
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Publication No.: US09680041B2Publication Date: 2017-06-13
- Inventor: Mehrdad M. Moslehi , David Xuan-Qi Wang
- Applicant: Solexel, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/0352 ; H01L31/18 ; H01L31/0468 ; H01L27/142 ; H01L31/0224 ; H01L31/054 ; H01L31/056
Abstract:
A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.
Public/Granted literature
- US20150303331A1 THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE WITH THROUGH-HOLES AND METHODS OF MANUFACTURING Public/Granted day:2015-10-22
Information query
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