Invention Grant
- Patent Title: Structure and method for a complimentary resistive switching random access memory for high density application
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Application No.: US13598378Application Date: 2012-08-29
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Publication No.: US09680091B2Publication Date: 2017-06-13
- Inventor: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- Applicant: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00
Abstract:
The present disclosure provides a resistive random access memory (RRAM) structure. The RRAM structure includes a bottom electrode on a substrate; a resistive material layer on the bottom electrode, the resistive material layer including a defect engineering film; and a top electrode on the resistive material layer.
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