Invention Grant
- Patent Title: Light emitting device, electrode structure and manufacturing method thereof
-
Application No.: US14953430Application Date: 2015-11-30
-
Publication No.: US09680123B2Publication Date: 2017-06-13
- Inventor: Chang-Ying Chen , Hsi-Hsuan Yen , Chun-Ting Liu
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW104120972A 20150629
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/56 ; H01L51/00

Abstract:
A light emitting device including a substrate, a first electrode structure, an organic light emitting structure and a second electrode structure is provided. The first electrode structure includes a first transparent conductive layer, a patterned conductive layer and a second transparent conductive layer disposed on the substrate in sequence, so that the patterned conductive layer is interposed between the second transparent conductive layer and the first transparent conductive layer in a thickness direction of the substrate. The organic light emitting structure and the second electrode structure are disposed on the substrate, and the organic light emitting structure is located between the first electrode structure and the second electrode structure in the thickness direction of the substrate. An electrode structure and a manufacturing method thereof are also provided.
Public/Granted literature
- US20160172618A1 LIGHT EMITTING DEVICE, ELECTRODE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-06-16
Information query
IPC分类: