Invention Grant
- Patent Title: Method to co-integrate SiGe and Si channels for finFET devices
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Application No.: US13907613Application Date: 2013-05-31
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Publication No.: US09685380B2Publication Date: 2017-06-20
- Inventor: Nicolas Loubet , Prasanna Khare , Qing Liu
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Seed Intellectual Property Law Group LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L21/3065 ; H01L21/308
Abstract:
A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.
Public/Granted literature
- US20140353760A1 METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES Public/Granted day:2014-12-04
Information query
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