Invention Grant
- Patent Title: Method of forming semiconductor device
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Application No.: US14711752Application Date: 2015-05-13
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Publication No.: US09685383B2Publication Date: 2017-06-20
- Inventor: Chiu-Hsien Yeh , Zhen Wu , Yen-Cheng Chang , Yu-Ting Tseng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/283 ; H01L21/308 ; H01L21/8238 ; H01L21/311 ; H01L21/02
Abstract:
A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.
Public/Granted literature
- US20160336194A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2016-11-17
Information query
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