发明授权
- 专利标题： FinFET devices
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申请号： US14750013申请日： 2015-06-25
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公开(公告)号： US09685507B2公开(公告)日： 2017-06-20
- 发明人: Veeraraghavan S. Basker , Kangguo Cheng , Theodorus E. Standaert , Junli Wang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran Cole & Calderon, P.C.
- 代理商 Steven Meyers; Andrew M. Calderon
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L29/06 ; H01L29/78 ; H01L29/417 ; H01L21/02 ; H01L21/306 ; H01L21/324 ; H01L21/762 ; H01L21/8234 ; H01L27/088 ; H01L29/66
摘要：
FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.
公开/授权文献
- US20160379892A1 FINFET DEVICES 公开/授权日：2016-12-29
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