Invention Grant
- Patent Title: Low power ideal diode control circuit
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Application No.: US14978532Application Date: 2015-12-22
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Publication No.: US09696738B2Publication Date: 2017-07-04
- Inventor: Timothy Bryan Merkin , Hassan Pooya Forghani-Zadeh
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; Charles A. Brill; Frank D. Cimino
- Main IPC: G05F1/575
- IPC: G05F1/575
Abstract:
A circuit that operates as a low-power ideal diode is disclosed, as well as an IC chip that contains the ideal diode circuit. The circuit includes a first P-channel transistor connected to receive an input voltage on a first terminal and to provide an output voltage on a second terminal, a first amplifier connected to receive the input voltage and the output voltage and to provide a first signal that dynamically biases a gate of the first P-channel transistor as a function of the voltage across the first P-channel transistor, and a second amplifier connected to receive the input voltage and the output voltage and to provide a second signal that acts to turn off the gate of the first P-channel transistor responsive to the input voltage being less than the output voltage.
Public/Granted literature
- US20160187904A1 Low Power Ideal Diode Control Circuit Public/Granted day:2016-06-30
Information query
IPC分类:
