Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14854071Application Date: 2015-09-15
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Publication No.: US09698096B2Publication Date: 2017-07-04
- Inventor: Hiroshige Hirano , Kazuhiro Kaibara
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-060538 20130322
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/522 ; H01L23/532 ; H01L21/48

Abstract:
A semiconductor device of the disclosure comprises: a first wiring disposed on a semiconductor substrate; a first insulating film disposed on the first wiring; a first via disposed in the first insulating film so as to be connected to the first wiring; a second wiring disposed on the first insulating film so as to be connected to the first wiring through the first via; a first organic insulating film disposed on the second wiring; a second via disposed in the first organic insulating film so as to be connected to the second wiring; a third wiring disposed on the first organic insulating film so as to be connected to the second wiring through the second via; and a second organic insulating film disposed on the first organic insulating film. A pad opening portion through which the third wiring is exposed is provided in the second organic insulating film, and the first via, the second via, the second wiring, and the third wiring are made of metal whose main component is copper.
Public/Granted literature
- US20160005688A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-01-07
Information query
IPC分类: