Invention Grant
- Patent Title: Semiconductor device and method of manufacturing a semiconductor device
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Application No.: US14953302Application Date: 2015-11-28
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Publication No.: US09698107B2Publication Date: 2017-07-04
- Inventor: Dietrich Bonart , Alfred Goerlach
- Applicant: Infineon Technologies AG , Robert Bosch GmbH
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102014117723 20141202
- Main IPC: H01L23/24
- IPC: H01L23/24 ; H01L23/58 ; H01L23/051 ; H01L21/66 ; H01L23/00 ; H01L23/522

Abstract:
Various embodiments provide a semiconductor device, wherein the semiconductor device comprises a semiconductor device chip formed at a substrate, wherein the semiconductor device chip comprises an active region formed in a center of the substrate and a boundary region free of active components of the semiconductor device chip; and a detection wiring arranged in the boundary region of the substrate and at least partially surrounding the active region, wherein the detection wiring and the semiconductor device chip are electrically isolated from each other; and wherein the detection wiring and the substrate are electrically connected with each other via a connection having a high electrical resistance.
Public/Granted literature
- US20160155677A1 Semiconductor device and method of manufacturing a semiconductor device Public/Granted day:2016-06-02
Information query
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