Invention Grant
- Patent Title: Power supply and gate driver therein
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Application No.: US14564679Application Date: 2014-12-09
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Publication No.: US09698666B2Publication Date: 2017-07-04
- Inventor: Jong Hyun Shin , Jaeha Kim , Hyun Soo Park , Jung-Ik Ha , Taewook Kang
- Applicant: Samsung Electronics Co., Ltd. , SNU R&DB FOUNDATION
- Applicant Address: KR Suwon-si KR Seoul
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,SNU R&DB FOUNDATION
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,SNU R&DB FOUNDATION
- Current Assignee Address: KR Suwon-si KR Seoul
- Agency: Staas & Halsey LLP
- Priority: KR10-2013-0166583 20131230
- Main IPC: G05F1/00
- IPC: G05F1/00 ; H02M1/08 ; H02M3/156 ; H03K17/691 ; H03K17/16 ; H02M1/00

Abstract:
A power supply and a gate driver includes a power switching element to control current, a control circuit to output a control signal for opening or closing of the power switching element, and a gate drive circuit to open or close the power switching element in accordance with the control signal. The gate drive circuit includes a first inductive circuit connected to a supply voltage source, and a second inductive circuit connected to an input stage of the power switching element, and transfers electrical energy stored in the input stage of the power switching element, using the first and second inductive circuits. Accordingly, electrical energy supplied to the input stage of the power switching element during an ON state of the power switching element is again recovered during an OFF state of the power switching element.
Public/Granted literature
- US20150188404A1 POWER SUPPLY AND GATE DRIVER THEREIN Public/Granted day:2015-07-02
Information query
IPC分类: