Invention Grant
- Patent Title: Drive circuit for reverse-conducting IGBTs
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Application No.: US14862582Application Date: 2015-09-23
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Publication No.: US09698772B2Publication Date: 2017-07-04
- Inventor: Daniel Domes
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014114085 20140929
- Main IPC: H03K17/567
- IPC: H03K17/567

Abstract:
A drive circuit includes a first output node for connection to the control electrode of the semiconductor switch, a voltage supply circuit, and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. A second resistor network is connected between the second switching stage and the first output node. A control logic is designed to generate control signals for the guiding of the first switching stage and the second switching stage in such a way that in a first operating mode of the semiconductor switch the semiconductor switch is driven only via the first resistor network, and in a second operating mode of the semiconductor switch the semiconductor switch is driven only via the second resistor network or both resistor networks.
Public/Granted literature
- US20160094216A1 Drive Circuit for Reverse-Conducting IGBTs Public/Granted day:2016-03-31
Information query
IPC分类: