Invention Grant
- Patent Title: Method of dicing a wafer
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Application No.: US14751035Application Date: 2015-06-25
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Publication No.: US09704748B2Publication Date: 2017-07-11
- Inventor: Joerg Ortner , Michael Roesner , Gudrun Stranzl , Rudolf Rothmaler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/308 ; H01L21/3065 ; G03F1/38

Abstract:
A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.
Public/Granted literature
- US20160379884A1 Method of Dicing a Wafer Public/Granted day:2016-12-29
Information query
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