Invention Grant
- Patent Title: Forming self-aligned conductive lines for resistive random access memories
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Application No.: US15182202Application Date: 2016-06-14
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Publication No.: US09705080B2Publication Date: 2017-07-11
- Inventor: Innocenzo Tortorelli , Fabio Pellizzer , Pietro Petruzza
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Mircon Technology, Inc.
- Current Assignee: Mircon Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00 ; H01L21/768 ; H01L27/24
Abstract:
Resistive random access memory elements, such as phase change memory elements, may be defined using a plurality of parallel conductive lines over a stack of layers, at least one of which includes a resistive switching material. The stack may be etched using the conductive lines as a mask. As a result, memory elements may be self-aligned to the conductive lines.
Public/Granted literature
- US20160293842A1 FORMING SELF-ALIGNED CONDUCTIVE LINES FOR RESISTIVE RANDOM ACCESS MEMORIES Public/Granted day:2016-10-06
Information query
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