- 专利标题: Asymmetric sensor pattern
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申请号: US13247922申请日: 2011-09-28
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公开(公告)号: US09705495B2公开(公告)日: 2017-07-11
- 发明人: Min Chin Chai , Patrick Prendergast , Massoud Badaye
- 申请人: Min Chin Chai , Patrick Prendergast , Massoud Badaye
- 申请人地址: NL Tilburg
- 专利权人: Creator Technology B.V.
- 当前专利权人: Creator Technology B.V.
- 当前专利权人地址: NL Tilburg
- 代理机构: Jianq Chyun IP Office
- 主分类号: G06F3/044
- IPC分类号: G06F3/044 ; H03K17/96
摘要:
An embodiment of a capacitive sensor array may comprise a first plurality of sensor elements and a second sensor element comprising a main trace that intersects each of the first plurality of sensor elements to form a plurality of intersections. A unit cell may be associated with each of the intersections, and each unit cell may designate a set of locations nearest to a corresponding intersection. A contiguous section of the main trace may cross at least one of the plurality of unit cells. The capacitive sensor array may further comprise a plurality of open zones, where each of the plurality of open zones is staggered relative to an adjacent open zone.
公开/授权文献
- US20120133611A1 Asymmetric Sensor Pattern 公开/授权日:2012-05-31
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