Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage of a memory cell can shift depending on when the read operation occurs. In one aspect, read voltages are set and optimized based on a time period since a last sensing operation. A timing device such as an n-bit digital counter may be provided for each block of memory cells to track the time. The counter is set to all 1's when the device is powered on. When a sensing operation occurs, the counter is periodically incremented based on a clock. When a next read operation occurs, the value of the counter is cross-referenced to an optimal set of read voltage shifts. Each block of cells may have its own counter, where the counters are incremented using a local or global clock.