- 专利标题: Thermal dissipation through seal rings in 3DIC structure
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申请号: US14451213申请日: 2014-08-04
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公开(公告)号: US09711427B2公开(公告)日: 2017-07-18
- 发明人: Jing-Cheng Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/367
- IPC分类号: H01L23/367 ; H01L23/10 ; H01L23/58 ; H01L25/065 ; H01L23/498 ; H01L21/48 ; H01L23/48 ; H01L23/00
摘要:
A package includes a die, which includes a semiconductor substrate, a plurality of through-vias penetrating through the semiconductor substrate, a seal ring overlapping and connected to the plurality of through-vias, and a plurality of electrical connectors underlying the semiconductor substrate and connected to the seal ring. An interposer is underlying and bonded to the die. The interposer includes a substrate, and a plurality of metal lines over the substrate. The plurality of metal lines is electrically coupled to the plurality of electrical connectors. Each of the plurality metal lines has a first portion overlapped by the first die, and a second portion misaligned with the die. A thermal conductive block encircles the die, and is mounted on the plurality of metal lines of the interposer.
公开/授权文献
- US20140339707A1 Thermal Dissipation Through Seal Rings in 3DIC Structure 公开/授权日:2014-11-20
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