- 专利标题: Interconnect structures with enhanced electromigration resistance
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申请号: US15175677申请日: 2016-06-07
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公开(公告)号: US09711450B1公开(公告)日: 2017-07-18
- 发明人: Chih-Chao Yang
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L23/532 ; H01L21/768
摘要:
Interconnect structures are provided that include an intermetallic compound as either a cap or liner material. The intermetallic compound is a thermal reaction product of a metal or metal alloy of an interconnect metallic region with a metal of either a metal cap or a metal layer. In some embodiments, the metal cap may include a metal nitride and thus a nitride-containing intermetallic compound can be formed. The formation of the intermetallic compound can improve the electromigration resistance of the interconnect structures and widen the process window for fabricating interconnect structures.
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