发明授权
- 专利标题： Antenna cavity structure for integrated patch antenna in integrated fan-out packaging
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申请号： US15056030申请日： 2016-02-29
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公开(公告)号： US09711465B2公开(公告)日： 2017-07-18
- 发明人: Wen-Shiang Liao , Chewn-Pu Jou , Feng Wei Kuo
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L23/66
- IPC分类号： H01L23/66 ; H01L23/498 ; H01L21/48 ; H01L23/522 ; H01L23/528 ; H01L23/552 ; H01L23/538 ; H01L23/00 ; H01L21/56
摘要：
An integrated fan-out package having a top-side redistribution wiring structure, a back-side redistribution wiring layer, a ground plane provided in the back-side redistribution wiring layer, and a molding compound layer having a thickness and provided between the back-side redistribution wiring layer and the top-side redistribution wiring structure is disclosed. The package has an RF IC die embedded within the molding compound layer and one or more integrated patch antenna structure provided in the top-side redistribution wiring structure. The one or more integrated patch antenna structure is coupled to the RF IC die and an antenna cavity is provided within the molding compound layer under each of the one or more integrated patch antenna.
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