- 专利标题： Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicle
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申请号： US14916801申请日： 2013-09-09
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公开(公告)号： US09711600B2公开(公告)日： 2017-07-18
- 发明人: Kazuhiro Mochizuki , Norifumi Kameshiro
- 申请人： HITACHI, LTD.
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 国际申请： PCT/JP2013/074222 WO 20130909
- 国际公布： WO2015/033463 WO 20150312
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; H01L29/16 ; H01L29/66 ; H01L29/861 ; H01L29/872 ; H01L29/06 ; B60L11/18 ; H02M7/537 ; H02P27/06 ; H01L29/36
摘要：
In a semiconductor device having a silicon carbide device, a technique capable of suppressing variation in a breakdown voltage and achieving reduction in an area of a termination structure is provided. In order to solve the above-described problem, in the present invention, in a semiconductor device having a silicon carbide device, a p-type first region and a p-type second region provided to be closer to an outer peripheral side than the first region are provided in a junction termination portion, a first concentration gradient is provided in the first region, and a second concentration gradient larger than the first concentration gradient is provided in the second region.
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