- 专利标题: Storage device having nonvolatile memory device and write method
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申请号: US13786787申请日: 2013-03-06
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公开(公告)号: US09715444B2公开(公告)日: 2017-07-25
- 发明人: Joonho Lee , Jong-Nam Baek , Dong-Hoon Ham , Sang-Wook Yoo , Intae Hwang
- 申请人: Joonho Lee , Jong-Nam Baek , Dong-Hoon Ham , Sang-Wook Yoo , Intae Hwang
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2012-0059353 20120601
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F11/14
摘要:
Disclosed is a method of writing data in a storage device including a nonvolatile memory device. The method includes receiving write data with a write request, detecting a number of free blocks, if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, but if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit.