Invention Grant
- Patent Title: Semiconductor device comprising a switch
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Application No.: US15013648Application Date: 2016-02-02
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Publication No.: US09721844B2Publication Date: 2017-08-01
- Inventor: Olivier Tesson , Hamza Nijjari
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP15290041 20150225
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/78 ; H01L29/417 ; H01L29/66 ; H01L29/423 ; H01L21/762 ; H01L23/482

Abstract:
A semiconductor device comprising a switch and a method of making the same. The device has a layout that includes one or more rectangular unit cells. Each unit cell includes a gate that divides the unit cell into four corner regions. Each unit cell also includes a source comprising first and second source regions located in respective opposite corner regions of the unit cell. Each unit cell further includes a drain comprising first and second drain regions located in respective opposite corner regions of the unit cell. Each unit cell also includes a plurality of connection members extending over the gate, source and drain for providing electrical connections to the gate, source and drain.
Public/Granted literature
- US20160247880A1 SEMICONDUCTOR DEVICE COMPRISING A SWITCH Public/Granted day:2016-08-25
Information query
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