- 专利标题: Controllable integrated capacitive device
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申请号: US14675468申请日: 2015-03-31
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公开(公告)号: US09721858B2公开(公告)日: 2017-08-01
- 发明人: Pascal Fornara , Christian Rivero
- 申请人: STMicroelectronics (Rousset) SAS
- 申请人地址: FR Rousset
- 专利权人: STMicroelectronics (Rousset) SAS
- 当前专利权人: STMicroelectronics (Rousset) SAS
- 当前专利权人地址: FR Rousset
- 代理机构: Slater Matsil, LLP
- 优先权: FR1455792 20140623
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L23/04 ; H01L49/02 ; B81B3/00 ; H01G5/18 ; H01L27/06
摘要:
An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.
公开/授权文献
- US20150372155A1 Controllable Integrated Capacitive Device 公开/授权日:2015-12-24
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