- 专利标题: Semiconductor light emitting device and fabricating method thereof
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申请号: US14949893申请日: 2015-11-24
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公开(公告)号: US09721931B2公开(公告)日: 2017-08-01
- 发明人: Yu-Wei Huang , Tao-Chih Chang , Chih-Ming Shen
- 申请人: Industrial Technology Research Institute
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 优先权: TW104120507A 20150625
- 主分类号: H01L25/07
- IPC分类号: H01L25/07 ; H01L25/075 ; H01L23/00 ; H01L33/62
摘要:
A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.
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