- Patent Title: Compound semiconductor device and manufacturing method of the same
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Application No.: US15076076Application Date: 2016-03-21
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Publication No.: US09722037B2Publication Date: 2017-08-01
- Inventor: Kozo Makiyama
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-268237 20111207
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/40 ; H01L29/205 ; H01L29/66 ; H01L29/778 ; H01L29/08 ; H01L29/20 ; H01L29/06
Abstract:
An embodiment of a compound semiconductor device includes: a substrate; a nitride compound semiconductor stacked structure formed on or above the substrate; and a gate electrode, a source electrode and a drain electrode formed on or above the compound semiconductor stacked structure. A recess positioning between the gate electrode and the drain electrode in a plan view is formed at a surface of the compound semiconductor stacked structure.
Public/Granted literature
- US20160204242A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2016-07-14
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