Invention Grant
- Patent Title: Methods for forming crystalline IGZO with a seed layer
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Application No.: US14138750Application Date: 2013-12-23
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Publication No.: US09722049B2Publication Date: 2017-08-01
- Inventor: Sang Lee , Khaled Ahmed , Youn-Gyoung Chang , Min-Cheol Kim , Minh Huu Le , Kwon-Sik Park , Woosup Shin
- Applicant: Intermolecular Inc. , LG Display Co., Ltd.
- Applicant Address: US CA San Jose KR Seoul
- Assignee: Intermolecular, Inc.,LG Display Co., Ltd.
- Current Assignee: Intermolecular, Inc.,LG Display Co., Ltd.
- Current Assignee Address: US CA San Jose KR Seoul
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66
Abstract:
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.
Public/Granted literature
- US20150179442A1 Methods for Forming Crystalline IGZO with a Seed Layer Public/Granted day:2015-06-25
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