Invention Grant
- Patent Title: Method for transferring semiconductor structure
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Application No.: US15238706Application Date: 2016-08-16
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Publication No.: US09722134B1Publication Date: 2017-08-01
- Inventor: Li-Yi Chen , Hsin-Wei Lee
- Applicant: MIKRO MESA TECHNOLOGY CO., LTD.
- Applicant Address: WS Apia
- Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee Address: WS Apia
- Agency: CKC & Partners Co., Ltd.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/62

Abstract:
A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure, in which the adhesive layer includes an adhesive component and a surfactant component therein after the disposing; irradiating the electromagnetic wave to the adhesive layer through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure while remaining the semiconductor structure within a predictable position, in which the semiconductor structure has a rejection band or is completely opaque, the carrier substrate has a pass band, and the pass band of the carrier substrate and the rejection band of the semiconductor structure overlaps; and transferring the semiconductor structure from the adhesive layer to a receiving substrate structure after the adhesion pressure of the adhesive layer is reduced.
Information query
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