Invention Grant
- Patent Title: Nozzle for stress-free polishing metal layers on semiconductor wafers
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Application No.: US14389540Application Date: 2012-03-30
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Publication No.: US09724803B2Publication Date: 2017-08-08
- Inventor: Jian Wang , Yinuo Jin , Hui Wang
- Applicant: Jian Wang , Yinuo Jin , Hui Wang
- Applicant Address: CN Shanghai
- Assignee: ACM Research (Shanghai) Inc.
- Current Assignee: ACM Research (Shanghai) Inc.
- Current Assignee Address: CN Shanghai
- Agency: Osha Liang LLP
- International Application: PCT/CN2012/073300 WO 20120330
- International Announcement: WO2013/143115 WO 20131003
- Main IPC: B24C5/04
- IPC: B24C5/04 ; C25F7/00 ; C25F3/30

Abstract:
A nozzle for charging and ejecting electrolyte in SFP process is disclosed. The nozzle includes an insulated foundation defining a through-hole, a conductive body as negative electrode connecting with a power source for charging the electrolyte and an insulated nozzle head. The conductive body has a fixing portion located on the insulated foundation. The fixing portion forms a receiving portion inserted into the through-hole and defining a receiving hole passing therethrough. The insulated nozzle head has a cover assembled with the insulated foundation above the conductive body and a tube extending through the cover and defining a main fluid path through where the charged electrolyte is ejected for polishing. The tube is inserted in the receiving hole and stretches out of the receiving hole of the conductive body forming an auxiliary fluid path between an inner circumferential surface of the receiving portion and an outer circumferential surface of the tube.
Public/Granted literature
- US20150072599A1 NOZZLE FOR STRESS-FREE POLISHING METAL LAYERS ON SEMICONDUCTOR WAFERS Public/Granted day:2015-03-12
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