Invention Grant
- Patent Title: MEMS device and multi-layered structure
-
Application No.: US15007762Application Date: 2016-01-27
-
Publication No.: US09725299B1Publication Date: 2017-08-08
- Inventor: Chun-Wen Cheng , Jiou-Kang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/82
- IPC: H01L29/82 ; B81B3/00

Abstract:
A device includes a substrate, a first structure, a second structure, a third structure and a bumper. The first structure is over the substrate. The second structure is over the substrate, wherein the second structure has a first end coupled to the first structure. The third structure is over the substrate, wherein the third structure is coupled to a second end of the second structure. The bumper is between the substrate and the third structure, wherein the bumper is a multi-layered bumper including a first conductive feature, a dielectric feature and a second conductive feature. The dielectric feature is over the first conductive feature. The second conductive feature is over the dielectric feature and electrically connected to the first conductive feature.
Public/Granted literature
- US20170210614A1 MEMS DEVICE AND MULTI-LAYERED STRUCTURE Public/Granted day:2017-07-27
Information query
IPC分类: