- Patent Title: Semiconductor device including a MEMS die and a conductive layer
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Application No.: US15071882Application Date: 2016-03-16
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Publication No.: US09725303B1Publication Date: 2017-08-08
- Inventor: Dominic Maier , Franz-Xaver Muehlbauer , Thomas Kilger
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L23/49 ; B81B7/00 ; B81C1/00 ; H04R19/00 ; H04R1/28

Abstract:
A semiconductor device includes a microelectromechanical system (MEMS) die, an encapsulation material, a via element, a non-conductive lid, and a conductive layer. The encapsulation material laterally surrounds the MEMS die. The via element extends through the encapsulation material. The non-conductive lid is over the MEMS die and defines a cavity. The conductive layer is over the MEMS die and the encapsulation material and is electrically coupled to the via element.
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