- 专利标题： Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition
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申请号： US14364829申请日： 2012-11-29
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公开(公告)号： US09725389B2公开(公告)日： 2017-08-08
- 发明人: Yun-Jun Kim , Hwan-Sung Cheon , Youn-Jin Cho , Yong-Woon Yoon , Chung-Heon Lee , Hyo-Young Kwon , Yoo-Jeong Choi
- 申请人： CHEIL INDUSTRIES INC.
- 申请人地址： KR Gumi-Si, Gyeongsangbuk-do
- 专利权人： Cheil Industries, Inc.
- 当前专利权人： Cheil Industries, Inc.
- 当前专利权人地址： KR Gumi-Si, Gyeongsangbuk-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2011-0147384 20111230; KR10-2011-0147860 20111230
- 国际申请： PCT/KR2012/010203 WO 20121129
- 国际公布： WO2013/100409 WO 20130704
- 主分类号： C07C39/21
- IPC分类号： C07C39/21 ; C07C39/205 ; C07C33/26 ; G03F7/039 ; G03F7/11 ; H01L21/027 ; C07C39/225 ; G03F1/00 ; G03F7/09 ; G03F7/20 ; H01L21/02 ; H01L21/033 ; H01L21/311
摘要：
Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.
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