Invention Grant
- Patent Title: Method for implanted-ion assisted growth of metal oxide nanowires and patterned device fabricated using the method
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Application No.: US14571519Application Date: 2014-12-16
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Publication No.: US09725801B2Publication Date: 2017-08-08
- Inventor: Jongbaeg Kim , Hyungjoo Na , Dae-Hyun Baek , Kyoung Hoon Lee , Jungwook Choi , Jaesam Sim
- Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY
- Applicant Address: KR Seoul
- Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY
- Current Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY
- Current Assignee Address: KR Seoul
- Agency: LRK Patent Law Firm
- Priority: KR10-2013-0157282 20131217
- Main IPC: C23C14/48
- IPC: C23C14/48 ; C23C14/04 ; C23C28/04 ; C23C14/08 ; C23C14/58
Abstract:
An embodiment of the present disclosure provides a method of growing metal oxide nanowires by ion implantation, the method including the steps of: depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires.
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