A method of treating a carbon-carbon structure is provided. The method includes the step of infiltrating the carbon-carbon structure with a ceramic preparation comprising an oxide compound and at least one of a boron compound or an oxide-boron compound to obtain a uniform distribution of the ceramic preparation within a porosity of the carbon-carbon structure. The carbon-carbon structure may be densified by chemical vapor infiltration (CVI) and heat treated to form borides. Heat treating the carbon-carbon may comprise a temperature ranging from 1000° C. to 1900° C.