Invention Grant
- Patent Title: Device member including cavity and method of producing the device member including cavity
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Application No.: US14430321Application Date: 2013-06-18
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Publication No.: US09726563B2Publication Date: 2017-08-08
- Inventor: Hiroyuki Fujita , Hiroshi Toshiyoshi , Hiroyuki Mitsuya
- Applicant: The University of Tokyo , Kabushiki Kaisha Saginomiya Seisakusho
- Applicant Address: JP Bunkyo-Ku, Tokyo JP Nakano-Ku, Tokyo
- Assignee: THE UNIVERSITY OF TOKYO,KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO
- Current Assignee: THE UNIVERSITY OF TOKYO,KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO
- Current Assignee Address: JP Bunkyo-Ku, Tokyo JP Nakano-Ku, Tokyo
- Agency: Snyder, Clark, Lesch & Chung, LLP
- Priority: JP2012-210578 20120925
- International Application: PCT/JP2013/066674 WO 20130618
- International Announcement: WO2014/050229 WO 20140403
- Main IPC: G01L9/00
- IPC: G01L9/00 ; H01L29/84 ; B81C1/00
Abstract:
A device member including a cavity, includes a base member, an interlayer, an upper layer, an opening portion, and a gas-permeable sealing layer. The base member includes a first semiconductor. The interlayer is formed on the base member and is non-conductive. The upper layer is formed on the interlayer and includes a second semiconductor. The opening portion is formed at the upper layer. The gas-permeable sealing layer is formed to seal the opening portion formed at the upper layer. The cavity is formed by removing the interlayer with an etching gas that penetrates through the sealing layer.
Public/Granted literature
- US20150211949A1 DEVICE MEMBER INICLUDING CAVITY AND METHOD OF PRODUCING THE DEVICE MEMBER INCLUDING CAVITY Public/Granted day:2015-07-30
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