Invention Grant
- Patent Title: Reflective mask blank, method of manufacturing same, reflective mask and method of manufacturing semiconductor device
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Application No.: US14787532Application Date: 2014-08-29
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Publication No.: US09726969B2Publication Date: 2017-08-08
- Inventor: Kazuhiro Hamamoto , Tatsuo Asakawa , Tsutomu Shoki
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-193070 20130918
- International Application: PCT/JP2014/072689 WO 20140829
- International Announcement: WO2015/041023 WO 20150326
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/50 ; G03F1/84 ; G03F7/20

Abstract:
A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70−BA30)/(BD70−BD30)≧60(%/nm) and maximum height (Rmax)≦4.5 nm.
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