Invention Grant
- Patent Title: Cleaning composition, cleaning process, and process for producing semiconductor device
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Application No.: US14717437Application Date: 2015-05-20
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Publication No.: US09726978B2Publication Date: 2017-08-08
- Inventor: Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-226698 20090930; JP2010-116623 20100520
- Main IPC: G03F7/42
- IPC: G03F7/42 ; C11D7/08 ; C11D7/50 ; C11D11/00 ; C09K13/00 ; C09K13/06 ; C11D7/26 ; C11D7/32 ; C11D7/34 ; H01L21/02 ; H01L21/311 ; H01L21/3213
Abstract:
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
Public/Granted literature
- US20150252311A1 CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2015-09-10
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