Invention Grant
- Patent Title: Method to define multiple layer patterns with a single exposure by charged particle beam lithography
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Application No.: US15219024Application Date: 2016-07-25
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Publication No.: US09726983B2Publication Date: 2017-08-08
- Inventor: Yen-Cheng Lu , Chih-Tsung Shih , Jeng-Horng Chen , Shinn-Sheng Yu , Anthony Yen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F1/78 ; G03F7/36 ; H01L21/027 ; H01L21/311 ; H01L21/768 ; H01L21/033 ; G03F7/095
Abstract:
The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.
Public/Granted literature
- US20170045827A1 Method To Define Multiple Layer Patterns With A Single Exposure By Charged Particle Beam Lithography Public/Granted day:2017-02-16
Information query
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