Invention Grant
- Patent Title: Semiconductor device having active mode and standby mode
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Application No.: US14134537Application Date: 2013-12-19
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Publication No.: US09727106B2Publication Date: 2017-08-08
- Inventor: Hiromi Notani , Takayuki Fukuoka , Takashi Yamaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-286531 20121228
- Main IPC: G06F1/26
- IPC: G06F1/26

Abstract:
In an active mode, a VDD line receives an internal power supply voltage from an external regulator. A VDD_RAM line receives an internal power supply voltage from an internal regulator. A PMOS switch includes a first PMOS transistor having a source and an N-type well connected to the VDD line, and a second PMOS transistor having a source and an N-type well connected to the VDD_RAM line and a drain connected to a drain of the first PMOS transistor. The first PMOS transistor is controlled based on a control command from a system control circuit and a voltage of the VDD_RAM line. The second PMOS transistor is controlled based on the control command and a voltage of the VDD line.
Public/Granted literature
- US20140189381A1 SEMICONDUCTOR DEVICE HAVING ACTIVE MODE AND STANDBY MODE Public/Granted day:2014-07-03
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