Invention Grant
- Patent Title: GOA circuit of LTPS semiconductor TFT
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Application No.: US14422700Application Date: 2015-02-06
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Publication No.: US09728147B2Publication Date: 2017-08-08
- Inventor: Juncheng Xiao
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201410612223 20141103
- International Application: PCT/CN2015/072358 WO 20150206
- International Announcement: WO2016/070513 WO 20160512
- Main IPC: G09G3/36
- IPC: G09G3/36 ; H01L27/12 ; H01L29/786 ; G11C19/28

Abstract:
The present invention provides a GOA circuit of LTPS semiconductor TFT, employed for forward-backward bidirectional scan transmission, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit utilizes a plurality of N-type transistors and a plurality of P-type transistors and comprises a transmission part (100), a transmission control part (200), an information storage part (300), a data erase part (400), an output control part (500) and an output buffer part (600). The transmission gate is employed to perform the former-latter level transferring signal, and the NOR gate logic unit and the NAND gate logic unit are employed to convert the signals, and the sequence inverter and the inverter are employed to save and transmit the signals to solve the issues that the stability of the circuit is poor, and the power consumption is larger as concerning the LTPS with single type TFT elements, and the problem of TFT leakage of the single type GOA circuit to optimize the performance of the circuit. The ultra narrow frame or frameless designs can be realized.
Public/Granted literature
- US20160343323A1 GOA CIRCUIT OF LTPS SEMICONDUCTOR TFT Public/Granted day:2016-11-24
Information query
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