Invention Grant
- Patent Title: Semiconductor device and semiconductor memory device
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Application No.: US13551147Application Date: 2012-07-17
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Publication No.: US09728235B2Publication Date: 2017-08-08
- Inventor: Taehyung Jung , Kwanweon Kim
- Applicant: Taehyung Jung , Kwanweon Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G11C7/10 ; G11C16/20 ; G11C29/00 ; G11C29/44

Abstract:
A semiconductor device includes a non-volatile memory unit, a data line configured to transfer data sequentially outputted from the non-volatile memory unit, and a shift register unit configured to include a plurality of registers that shift and store the data transferred through the data line in synchronization with a clock. The semiconductor device includes a non-volatile memory unit having an e-fuse array, and transfers the data stored in an e-fuse array to other constituent elements of the semiconductor device that use the data of the e-fuse array in order to have the data stored in the e-fuse array, including diverse setup information and repair information.
Public/Granted literature
- US20140022856A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2014-01-23
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